Characterization of BaBiO3 Thin Films Prepared by the MBE Method

Abstract

BaBiO3 (BBO) thin films were synthesized onto SrTiO3(110) substrates by the molecular beam epitaxy (MBE) method using an oxygen radical source in order to oxidize the films. The oxygen radical source was operated at an rf power of 600 W. The background pressure during the deposition was 5xl0-5 Torr. X-ray photoelectron spectroscopy (XPS) of film prepared at room temperature (R.T.) showed that the chemical state of bismuth atoms in the film could be explained by multiple-valence states. This result suggests that the oxygen radical is effective for the formation of BBO films.