Abstract
Bi5FeTi3O15 (BFTO) and BFTO/CuO films were deposited by a sol-gel technique, which exhibited macroscopic ferroelectric properties. It was found that the BFTO/CuO films showed a short circuit photocurrent density (Jsc) enhanced by nearly 10 times and power conversion efficiency increased by 13-fold compared to those of the BFTO film. The significant increase in the photovoltaic (PV) response may be attributed to the p-n junction internal electric field acting as the driving force of photogenerated carriers. Furthermore, both BFTO and BFTO/CuO films indicated a switchable PV response in both polarities. The open circuit voltage (Voc) and Jsc for BFTO and BFTO/CuO were observed to be −0.59 V and +43.88 μA/cm2 and −0.23 V and +123.16 μA/cm2, respectively, after upward poling, whereas after downward poling, +0.11 V and −6.26 μA/cm2 and +0.17 V and −83.21 μA/cm2 for BFTO and BFTO/CuO were observed, respectively. The switchable PV responses were explained by the ferroelectric depolarization field, whose direction could be altered with the variation in the applied poling field. This work provides an efficient approach to developing ferroelectric film based PV devices with low cost.
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