Abstract

While recent studies have revealed that chemical doping can enhance the photovoltaic (PV) response of ferroelectrics under light with photon energy (hν) lower than the bandgap energy (E g), its impact under above-bandgap illumination (hν > E g) is not fully understood. In this study, the PV response at hν > E g of Mn-doped BiFeO3 (BFO) thin films with a periodic stripe domain pattern is investigated. The short-circuit photocurrent density (J sc) and open-circuit voltage decrease with increasing Mn content. Analyses of the light-polarization angle dependence of J sc indicate that the PV response arises primarily from the non-centrosymmetric nature of crystal lattices in both the bulk and domain wall (DW) regions. In contrast, the contribution of local electric fields (E local) across DWs which dominates the PV response of undoped BFO films is significantly suppressed by doping. We consider that a screening effect by charged defects leads to a suppressed E local in the Mn-doped films.

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