Abstract
To investigate the Mg-dopability in In-polar InN epilayers grown by molecular beam epitaxy, polarity inversion dependence on Mg-doping level is studied. A multiple-InN layer-structure sample with different Mg-doping levels is grown and analyzed by transmission electron microscopy. Formation of high density V-shaped inversion domains is observed for the Mg-doped InN with Mg concentration ([Mg]) of 2.9×1019cm−3. These domains lead to polarity inversion from In to N polarity. Further study for Mg-doped InN epilayers shows that polarity inversion takes place when [Mg] increases above 1.6×1019cm−3. It is also shown that the Mg-sticking coefficient is almost independent of the polarity.
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