Abstract
Simultaneous growth of ⟨111⟩B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy {111}B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain {111}B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side {111}B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.
Published Version
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