Abstract
Enhancing the photoresponse of single-layered semiconductor materials is a challenge for high-performance photodetectors due to atomically thickness and limited quantum efficiency of these devices. Band engineering in heterostructure of transition metal chalcogenides (TMDs) can sort out part of this challenge. Here, we address this issue by utilizing the plasmonics phenomenon to enrich the optoelectronics property of the WSe2/MoS2 heterojunction and further enhancement of photoresponse. The introduced approach presents a contamination-free, tunable and efficient way to improve light interactions with heterojunction devices. The results showed a 3600-fold enhancement in photoresponsivity and a 46-fold increase in external quantum efficiency (549%) along with a fast photoresponse time (~2 μs) and light polarization dependence. This improvement may assign to multiple light scatterings by the Au nanoarrays and creation of strong local electrical fields (hot spots) at the interfaces of the gold nanoarrays and the TMDs heterostructure. The high-energy electrons (hot electrons) originating from hot spots surmount easily to conduction bands of heterojunction which is leading to a remarkable enhancement of photocurrent. The plasmons assisted photoresponse strategy can be easily matched with the semiconductor industry to boost the performance of optoelectronics devices for practical applications.
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