Abstract
AbstractFrequency‐dependent, long‐wavelength random‐phase approximation (RPA) polarizabilities of a n‐type zero‐gap semiconductor are calculated for parabolic and spherical bands. The long wavelength plasmon dispersion relation is established. The dispersion of plasmons is mainly determined by the wave vector dependence of the intraband (free‐electron‐gas type) polarizability. For high electron concentrations, due to Γ8–Γ8 interband polarizability, in the standard plasmon dispersion relation, the concentration‐dependent background dielectric constant has to be used. For low electron concentrations the frequency and wave vector dependence of the Γ8–Γ8 interband polarizability makes the above procedure inaccurate. A more accurate procedure is derived.
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