Abstract
Tungsten nitride (WN) has potential as an interconnect barrier film. Deposition of WN films with bis(tert-butylimido)bis(dimethylamido)tungsten utilizing plasma-enhanced atomic layer deposition has been investigated over a temperature range of 100–400 °C employing N2, H2/N2, and NH3 remote plasmas. Spectroscopic ellipsometry has been used to determine film thickness and optical properties. Film growth rate varied from 0.44 to 0.65 Å/cycle. Chemical composition was investigated with x-ray photoelectron spectroscopy. W:N ratios varied from 0.95:1 to 3.76:1 and carbon levels were sub-2% for atomic layer deposition conditions. Resistivity measurements, derived from four-point probe measurements, indicate higher deposition temperature and gas flow rates produce the lowest resistivity films. The lowest resistivity film of the study, which measured 405 μΩ cm, was deposited with a hydrogen-rich H2/N2 plasma at 400 °C.
Published Version
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