Abstract
Surface differential reflectivity spectroscopy is a fast non-destructive in situ and real-time measurement technique which allows following the first stages of thin film deposition. However, when applied to sputtering technique, spectra can strongly be distorted by residual light coming from plasma in a way, as shown herein, that depends on sample reflectivity. Thanks to suitable measurements, before and after growth with and without plasma or illumination lights, a protocol of signal correction is proposed to get rid of the spurious plasma contribution. The interest of the method is illustrated in the case of silver deposition on a silicon substrate.
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