Abstract
The initial process of dry oxidation on aSi(001)-(2 × 1) surface was investigated using surface differential reflectance (SDR) spectroscopy. Thephoton energy dependence of the difference spectra and their time courses during oxidationwere analysed. It is suggested that oxidation processes at different adsorption sites can beidentified from the SDR spectra. The temperature dependence of the time courses wasinvestigated in order to obtain the activation energies. Finite activation energies formonolayer oxidation were found in the temperature range of 623–823 K, corresponding toLangmuir-type adsorption. The photon energy dependence of the activation energiescould reflect the involvement of different reaction processes. Chemical reactionprocesses of both oxygen and silicon during oxidation in a monolayer regime arediscussed.
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