Plasma deposition of fluorocarbon thin films using pulsed /continuous and downstream radio frequency plasmas

Abstract

Fluorocarbon (FC) films deposited in continuous wave (cw) and pulsed difluoromethane radio frequency (r.f.) plasmas were characterized using Fourier transform infrared spectroscopy and atomic force microscopy. The effects of varying r.f. power, cw/pulsed discharge mode, and the distance of the substrate from the coil on the deposition rate, film structure, and surface roughness were investigated. These cw and pulsed deposition systems were characterized in-situ by means of optical emission spectroscopy. Emission intensities of H α, H β, H 2 and carbon-containing species in the coil region and downstream plasmas as a function of plasma parameters were measured. The hydrogen excitation temperature obtained from the relative emission intensities of H α and H β lines shows a clear dependence on the r.f. power and the substrate position. Correlations between film properties, gas-phase plasma diagnostic data, and film growth processes were discussed. Experimental results indicate that the film growth within the coil region in cw plasmas is controlled by the synergistic effect between energetic ions and low-energy species. The film growth in pulsed and downstream plasmas is controlled by the growth of coalesced nuclei via surface diffusion of adsorbed species, which results in the deposition of FC films with relatively rough surfaces.