Abstract
The authors describe a simple method for obtaining planar regions of GaAs (001) suitable for surface science studies. The technique, which requires no buffer layer growth, atomic hydrogen source, or the introduction of As flux, employs controllable Ga droplet motion to create planar trail regions during Langmuir evaporation. Low-energy electron microscopy/diffraction techniques are applied to monitor the droplet motion and characterize the morphology and the surface reconstruction. It is found that the planar regions exhibit atomic flatness at the level of a high-quality buffer layer.
Highlights
GaAs surfaces are of appreciable scientific and technological importance and have been actively studied over the years.1–3 The preparation of clean, atomically flat surfaces is paramount for fundamental studies of surface energetics, quantum structure formation, and epitaxial growth.1–3 With the emergence of in situ characterization techniques, such as transmission4 and low energy electron microscopy (LEEM),5,6 it is desirable to establish a simple means of creating planar surfaces for fundamental studies which do not demand a high As overpressure and which are compatible with the deposition geometry limitations imposed by electron optics
The authors describe a simple method for obtaining planar regions of GaAs (001) suitable for surface science studies
We describe a simple method of smoothing GaAs (001) which utilizes the motion of Ga droplets and does not require material deposition
Summary
GaAs surfaces are of appreciable scientific and technological importance and have been actively studied over the years. The preparation of clean, atomically flat surfaces is paramount for fundamental studies of surface energetics, quantum structure formation, and epitaxial growth. With the emergence of in situ characterization techniques, such as transmission and low energy electron microscopy (LEEM), it is desirable to establish a simple means of creating planar surfaces for fundamental studies which do not demand a high As overpressure and which are compatible with the deposition geometry limitations imposed by electron optics. GaAs surfaces are of appreciable scientific and technological importance and have been actively studied over the years.. The preparation of clean, atomically flat surfaces is paramount for fundamental studies of surface energetics, quantum structure formation, and epitaxial growth.. With the emergence of in situ characterization techniques, such as transmission and low energy electron microscopy (LEEM), it is desirable to establish a simple means of creating planar surfaces for fundamental studies which do not demand a high As overpressure and which are compatible with the deposition geometry limitations imposed by electron optics. We describe a simple method of smoothing GaAs (001) which utilizes the motion of Ga droplets and does not require material deposition
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