Planar channelling and diffraction of relativistic electrons in thin crystals

Abstract

The interaction of relativistic electrons with thin crystals has been investigated in the approximation of a continuum potential of a system of crystallographic planes. A numerical method of solution of the one-dimensional Schrodinger equation has been worked out. The shapes of angular distribution of the electrons which occupy the different bands of transverse motion have been determined on the basis of numerical calculations. The calculated results have been used to analyse the experimental data obtained by measuring the angular distributions of 5.1 MeV electrons incident along the (110) planes of Si crystal. On the one hand, experimental and theoretical investigations indicate a possibility of preferential population of the transverse motion states, and, on the other hand, make it possible to separate the channelling effects from those of electron diffraction Etude experimentale et theorique montrant la possibilite de peuplement preferentiel des etats fixes du mouvement transversal et la possibilite de separer les effets de canalisation des effets de diffraction d'electrons