Abstract
The piezoresistive coefficients in n-MOSFET devices have been experimentally determined. The π 11,π 12, and for the first time π 44, two-dimensional (2D) piezoresistive coefficients in the n-type inversion layers have been analytically developed, including the quantum effects, the intravalley-intervalley scattering effects, the different saturation velocity effects and the hot-electron effects. The carrier charge variation due to the change of the band gap has also been taken into account. A mixed 2D/3D model for the piezoresistivity effects has been introduced in the process/device simulator IMPACT and good agreement between simulation and experiment has been achieved.
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