Abstract
The theory of the piezoresistive effect in quantized n-type inversion layers is developed including various effects depending on the transverse and lateral electric fields inside N-MOS transistors, the hot-electron effect, intravalley and intervalley scattering effects, and different saturation velocity effects. The coefficient Pi /sub 44/ is given in an analytical form. A mixed 2D/3D piezoresistive effect model is introduced in the process/device simulation package IMPACT. The piezoresistive effect in N-MOS transistors is simulated making use of IMPACT, and comparison of the simulations with experiments is satisfactory. >
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