Abstract
Abstract The piezoresistivity effects in MOSFET devices have been experimentally determined. The Pgr;11, Pgr;12 and Pgr;44 2D piezoresistive coefficients in both n- and p-type inversion layers have been analytically developed including the quantum effects, the intravalley-intervalley scattering effects, the different saturation velocity effects and the hot-electron effects. In addition, the hole stress-induced effective-mass modification has been applied to determine the piezoresistive coefficients in p-type inversion layers. The carrier population variation due to the change of the band gap has also been taken into account in the weak inversion regime. A mixed 2D/3D model for the piezoresistivity effects has been introduced in the process/ device simulator IMPACT and a good agreement between simulation and experiment has been achieved.
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