Self-Consistent Calculations of Subbands in p-Type Semiconductor Inversion Layers

Abstract

After a review of previous calculations of electric subbands in p-type silicon inversion layers new results for a p-type GaAlAs-GaAs hetero-structure are reported. Due to the electric field at the interface the spin degeneracy is lifted,leading to two heavy hole masses for finite wave vector. The calculated effective masses are compared with experimental results. In addition, self-consistent subband cal culations for p-type germanium inversion layers adjacent to grain boundaries in artificially grown bicrystals are reported.