Abstract
Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.
Highlights
Sensors based on Mechanical Systems (MEMS) technologies, which can withstand harsh environments, have been extensively developed and investigated recently[1,2]
The measurement technique proposed in this study can be used to characterize the piezoresistive effect in other semiconductors at high temperatures, and to tune their gauge factor based on the combination phenomenon
A silicon carbide (SiC) bridge with Al electrodes deposited and patterned on its top surface was released from the Si substrate, while its two ends were fixed to the substrate by non-released pads with a surface area of 100 μm × 300 μm
Summary
Sensors based on MEMS technologies, which can withstand harsh environments, have been extensively developed and investigated recently[1,2] The use of these transducers could improve the efficiency of systems and predict possible failures due to hostile conditions[3]. The piezoresistance of p-type 3C-SiC grown on large scale Si wafers with a diameter of 150 mm has been reported recently, showing a gauge factor of approximately 30, which is promising for mechanical sensors[36,37]. The measurement technique proposed in this study can be used to characterize the piezoresistive effect in other semiconductors at high temperatures, and to tune their gauge factor based on the combination phenomenon
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