Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Abstract

The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, −5.2, and 30.3, respectively. The fundamental piezoresistive coefficients π11, π12, and π44 of p-type 3C-SiC were obtained to be 1.5 × 10−11 Pa−1, −1.4 × 10−11 Pa−1, and 18.1 × 10−11 Pa−1, respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors.