Abstract
This paper describes the electrical properties of the CSD-derived ferroelectric PZT thin films on the oxide electrode of LaNiO 3 (LNO), which can improve the electrical fatigue for the PZT thin film. We successfully control the orientation of the resulting LNO thin film electrode by the molecular design of the precursor solution to control the orientation of the PZT thin film with a MPB composition on the LNO. As a result, PZT/LNO thin film capacitors exhibited superior electrical properties with no fatigue, not only for remanent polarization but also for piezoelectric and dielectric properties.
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