Abstract
This paper proposes two pico-ampere voltage references (VRs) for Internet-of-Things (IoT). The first VR is composed of two subthreshold PMOS transistors. It achieves a minimum temperature coefficient (TC) of 29 ppm/oC, a current consumption of 50.5 pA, a line regulation of 7,206 ppm/V, and a power supply rejection ratio (PSRR) of −28 dB at 100 Hz. In order to satisfy the better line regulation and PSRR requirement of high-end IoT systems, a five-PMOS VR is proposed to realize ultra-high performance in the line regulation and PSRR. By employing a regulation technique, the impacts of drain-induced barrier lowering (DIBL), gate-inducted drain leakage (GIDL), and gate-drain capacitance feedthrough are largely mitigated. Therefore, high performance in line regulation and PSRR are obtained. The post-layout simulation results based on a 0.18 μm standard CMOS process show that the proposed five-PMOS VR achieves a line regulation of 23.6 ppm/V over a supply voltage from 1.0 V to 2.0 V. Besides, the simulated PSRR is −62 dB@100Hz when the total current consumption is 101 pA at 27oC.
Published Version
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