Physically transient memristor based on the permeation of water at the interface of electrode and substrate

Abstract

Transient memristor is highly desirable for secure memory system and secure neuromorphic computing. Here, a transient memristor with the MgO thin film as resistive dielectric material and the Ni as electrode material is reported. The memristor shows reversible and nonvolatile bipolar resistive switching performance, narrow distribution of low resistance state (LRS) and high resistance state (HRS), uniform switching voltages and stable retention at room temperature. It is indicated that the resistive switching mechanism of the memristor is conductive filament in LRS and space charge limiting current in HRS. In addition, the memristor can be failed after immersed in deionized water for 5 min due to the film damage resulting from large frizzle and the dissolution of Ni and MgO film. The prepared memristor has potential for secure memory system application.