Physical properties of a-C:H films prepared by electron cyclotron resonance microwave plasma chemical vapor deposition

Abstract

a-C:H films have been deposited on silicon and glass using electron cyclotron resonance microwave plasma decomposition of CH 4 diluted with Ar gas at 0–160 V rf negative bias and 65–250 W microwave power. The deposition rates, absorption coefficients, optical bandgaps, refractive indices and internal stresses of the a-C:H films grown under varying preparation parameters have been measured. The microstructure of the carbon films has been evaluated by Raman spectroscopy. It has been found that the properties and structure of the carbon films are strongly dependent upon the rf substrate bias voltage. At lower rf biases (0 and 40 V), the films are transparent polymer-like carbon films with lower refractive indices, lower internal stresses, and higher optical bandgaps; at higher rf biases (80, 120 and 160 V), they are semi-transparent diamond-like carbon films with higher refractive indices, higher internal stresses and lower optical bandgaps. Microwave power has little influence on the properties and structure of the a-C:H films.