Physical modeling of low temperature polycrystalline Si thin-film transistors

Abstract

Modeling of low temperature polycrystalline (poly) Si thin film transistors (TFTs) in both the subthreshold and the on-state regions is presented. In the subthreshold region, effective channel mobility (μ eff ) model is based on the Meyer-Neldel rule with the physical origin of carrier thermionic emission activated by multi-phonon absorption process. In the on-state region, μ eff model is based on grain boundary barrier controlled carrier thermionic emission and mobility degradation effect. A unified drain current model is derived by considering the inversion carrier density covering both subthreshold and on-state regions.