Abstract
Polycrystalline Si (poly-Si) thin film transistors (TFTs) have been utilized for logic and analog circuits in display applications. For further improvement in functionality, non-volatile memory operation of TFT has been anticipated. In MOSFET applications, Si nanocrystals embedded in SiO2 matrix are used as charging nodes in floating gate memory devices. Si nanocrystals are advantageous in terms of better retention characteristics compared to poly-Si floating gate because charged dots are electrically separated each other and charge escape via SiO2 defects are suppressed to a small number. Recently, good performance of low-temperature processed TFT memory using Si nano crystals formed by plasma enhanced chemical vapor deposition (PECVD) has been reported.
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