Abstract
This paper presents a physical description of two specific aspects in drain-extended MOS transistors, i.e., quasi-saturation and impact-ionization effects. The 2-D device simulator Medici provides the physical insights, and both the unique features are originally attributed to the Kirk effect. The transistor dc model is derived from regional analysis of carrier transport in the intrinsic MOS and the drift region. The substrate-current equations, considering extra impact-ionization factors in the drift region, are also rigorously derived. The proposed model is primarily validated by MATLAB program and exhibits excellent scalability for various transistor dimensions, drift-region doping concentration, and voltage-handling capability.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
