Abstract
The main features of the industry standard compact model HiSIM-HV for high-voltage MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential determination in the MOSFET core and the surrounding drift regions, providing the high-voltage capabilities. Consequently, HiSIM-HV can accurately calculate the physical potential distribution in the entire asymmetric LDMOS structure or the symmetric HVMOS structure and determine all electrical and thermal high-voltage MOSFET properties without relying on any form of macro modeling or sub-circuit formulation. Furthermore, HiSIM-HV’s consistent potential-based approach enables the reproduction of all structure-dependent scaling properties of high-voltage MOSFET features with a single global parameter set. The full scaling properties of HiSIM-HV with respect to the MOSFET-core geometry parameters of gate length and gate width as well as the drift-region parameters of drift-region length and drift-region doping are unique among the available compact high-voltage MOSFET models. Continuous development of HiSIM-HV is carried out in cooperation with the international semiconductor industry and improved versions of HiSIM-HV are released 2 times per year through the Compact Modeling Council (CMC).
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call