Abstract
We show experimentally that, in contrast to past simulation results, I/sub SUB(max/)/I/sub D/ decreases with decreasing silicon layer thickness. This is supported by two-dimensional numerical simulation results: the above phenomenon results from the nonlocal effect and the slightly gate-overlapped LDD structure. We also show that the velocity overshoot effect can suppress I/sub SUB(max/)/I/sub D/ in short-channel MOSFET/SIMOX. It is demonstrated that 0.1-/spl mu/m-gate ultrathin-film nMOSFET/SIMOX will have a 10-year lifetime at the supply voltage of 1.6 V, although an abnormal degradation is indicated in such an extremely short-channel SOI device. >
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