Abstract
We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have used a previous physically based model as the starting point and added a new term in order to account for electron velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 μm channel lengths. We have paid more attention to the modelling of velocity overshoot effects at low temperature, where ballistic transport is more likely due to the reduced energy relaxation produced by phonons.
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