Abstract
In this work we present an improved and complete deep-submicron MOSFET model for circuit simulation. This model includes expressions with an infinite order of continuity for channel current and all large and small-signal parameters, and therefore shows smooth transitions between the different operating regimes. The model is an improvement over our previous MOSFET model in order to include several effects that become important in submicron transistors. The agreement with the experimental measurements is good in a wide range of channel lengths.
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