Abstract
Abstract Experimental and theoretical investigations of hot electron transport in very short semiconductors, such as short n + n n + GaAs and Si MOSFETS are summarized placing main emphasis on drift velocity overshoot and hot electron effect of two dimensional system. Monte Carlo simulation reveals that the electron drift is very anisotropic in the overshoot region. Quasi-static analysis is made to obtain velocity distribution in short n + n n + GaAs. Ballistic transport is examined in sandwich type n + n n + GaAs with 300A channel length and Monte Carlo analysis shows an importance of potential drop not only in n region but also in n + region. Analysis of very short channel MOSFETs indicates that the normal electric field dependence of the mobility plays an important role in their characteristics. Hot electron transport of two-dimensional electrons in MOS inversion layers is examined experimentally and theoretically. Monte Carlo simulation shows that the first-order intervalley scattering results in velocity saturation at high fields.
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