Abstract
This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10-2 S/cm under 800 °C.
Highlights
Yttria-stabilized zirconia (YSZ) is recognized as a very attractive electrical insulator because it is characterized by high chemical stability, resistivity, and relative dielectric constant
We aimed to show how the RF magnetron sputtering conditions of ZrO2 + 7 % Y2O3 target affect the deposition rate
By means of X-ray diffraction (XRD) analysis, it was established that the deposited films were amorphous, they could crystallize into pure cubic structures after being annealed in air under temperatures above 820 ◦C
Summary
Yttria-stabilized zirconia (YSZ) is recognized as a very attractive electrical insulator because it is characterized by high chemical stability, resistivity, and relative dielectric constant. Doped zirconia has ionic transport properties under high temperatures, and can be used as a solid electrolyte in micro solid-oxide fuel cells (MSOFC) [3, 13, 10] or as sensitivity elements in integrated gas sensors (GS) [4, 14]. For these devices, the thickness of the solid electrolyte layer must not exceed 1 ÷ 2 μm in order to reduce ohmic loss and decrease the operating temperatures down to 500 ÷ 600 ◦C [6]. The requirements imposed on the solid electrolyte are rather tough: it has to be mechanically strong and chemically reliable at high temperatures, mechanically and chemically stable in time, should have maximal ionic and minimal electronic conductivity, and be gasproof
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