Abstract
Yttria-stabilized zirconia (YSZ) thin films were obtained by RF magnetron sputtering using sintered YSZ targets. Three types of target were used in order to investigate the effect of the amount of Y/sub 2/O/sub 3/. These contained 3, 9, and 20 mol.% Y/sub 2/O/sub 3/ as the stabilizer. The effects of preparation conditions and the physical and electrical properties were examined by X-ray diffraction analysis, I-V measurement of an MOS structure fabricated by evaporating Al electrode on YSZ film in Si, and measurements of photoabsorption characteristics. Crystallinity of the sputtered layer depended on the substrate temperature. For substrate temperatures above 300 degrees C, polycrystalline YSZ film was obtained. The phase of the film was dominated by the amount of doped Y/sub 2/O/sub 3/ in the target. The dielectric constant and optical energy gap were found to be 24.5 approximately 28.6 and approximately 4.4 eV, respectively. Using the YSZ film as a buffer layer on an alumina substrate, superconducting properties of Y-Ba-Cu-O were observed. The gas-sensitive properties of the films were confirmed. >
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