Abstract
The photovoltaic (PV) effects from sandwiched porous silicon (PS), fabricated using electrochemical etching processes, have been investigated. Contacts were made by bonding to semi-transparent coatings of Au via a secondary supportive Al contact. The contribution of the PV effects from the junctions of the metal (Au)/n-type and p-type PS, and partly from the PS/bulk Si heterojunction, was observed for the visible wavelength range of light, and under white light of different powers. Some optical and electrical characteristics of various PV devices have been measured under a range of optical powers. Photovoltages of some of the PV devices with different preparation conditions were measured as a function of UV/VIS excitation energies. The polarities of photovoltage for both types (n- and p-PS) of device were found to be the same. The external quantum efficiencies of the PV devices are also presented.
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