Abstract
AbstractThin carbon films are deposited via CVD from the precursor methylene iodide (CH2I2) using two different activation sources; a broadband IR lamp and a thermal plate. Large differences in deposition rates are observed when comparing the two sources of activation. The characteristics of the deposition kinetics of the highly sensitive system are also investigated by employing a split, symmetric reactor, and by using a qualitative model. Raman spectroscopy (RS) is used for microstructural characterization of the films. The lamp technique allows a simple and low‐cost experimental setup, for deposition of disordered carbon thin films at relatively low temperatures and high rates.
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