Abstract
Hot carrier effects are thoroughly investigated in deep submicrometre N-channel SOI MOSFETs using photon emission measurements. The maximal photon number (N/sub ph/) is obtained for the lower gate bias in the case of a sufficiently high drain voltage and/or small gate length. For low V/sub d/ and/or long channels, N/sub ph/ is maximum around V/sub g//spl sime/V/sub d//2. These results are in agreement with those obtained in hot-carrier-induced degradations.
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