Abstract
In this paper, we report the obtention of quaternary (B)InGaAs/GaAs alloys grown by metal organic vapour phase epitaxy has been studied using high resolution x ray diffraction (HRXRD) and photoluminescence (PL) measurements. HRXRD has been achieved to determine the indium fraction (35%) incorporated into BGaAs, which shows that the strain effects have been reduced compared to the InGaAs one. Through further careful inspection, boron-indium gallium arsenic (BInGaAs) epilayer exhibits several PL peak emissions. They are associated to the exciton bond induced by the boron isoelectronic and cluster defect states. In contrast, for the BInGaAs single quantum well (SQW), we have a band to band transition mainly influenced by the confinement of electron-hole pairs in the BInGaAs well. However, the PL of BInGaAs SQW temperature-dependence has shown a localization effect due to the conduction-band modulation induced by the boron clustering in the structure. At high PL temperature, we have a band to band transition of electron-hole pairs in the BInGaAs well.
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