Photoluminescence of GaInN/GaN multiple quantum well heterostructures on amorphous surface through biaxial metal buffer layers

Abstract

We report the successful epitaxial growth of biaxial GaN films using metal-organic vapor phase epitaxy on amorphous surfaces (native oxide covered Si wafer) through biaxial metal buffer layers of Mo and W. The biaxial metal films were grown using a dynamic oblique angle deposition technique. An epitaxial relationship of GaN(0002)//Mo(110) in the out-of-plane orientation and GaN[101¯0]//Mo[001] in the in-plane orientation was found by a detailed X-ray diffraction analysis. Similar epitaxial results have been found for GaN/W. These biaxial GaN films on biaxial Mo and W buffer layers were used as seeds to grow GaInN/GaN multiple quantum well structures (MQWs). A high intensity, narrow peak, and uniform luminance space distribution of photoluminescence signal was observed from these MQWs. This work opens up an alternative strategy for the growth of GaN-based films on amorphous substrates using biaxial metal buffer layers.