Abstract
Erbium-doped aluminum oxide films with embedded Si nanoparticles have been obtained by magnetron puttering of a composite (Al + Er2O3 + Si) target and subsequent electrochemical anodization at room temperature. The photoluminescence (PL) spectra of these films are measured in the temperature range 4.2–300 K. Efficient PL is observed at a wavelength of 1.54 μm without preliminary annealing of the samples, which indicates the possibility of activating Er3+ ions without any high-temperature treatment. The aluminum oxide films with embedded Si nanoparticles were observed to show stronger PL at a wavelength of 1.54 μm than similar films without Si nanoparticles. This effect can be explained by additional pumping of Er-based luminescence centers and energy transfer from the Si nanoparticles.
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