Abstract
Er-doped ZnO thin films on a SiO2/Si substrate were fabricated by radio frequency magnetron sputtering, in which embedded Si nanoparticles (NPs) were formed by ion implantation and subsequent thermal annealing. The effects of Si NPs on the Er photoluminescence (PL) at 1.54 μm were investigated. In addition to the typical emission at 1.54 μm from Er3+, a new 1.16-μm emission peak was also observed after a thermal treatment. Further annealing resulted in shift of emission intensity between the 1.16- and 1.54-μm luminescence features. The observed Si nanoparticles (NPs) were ∼4 nm in diameter. The formation of new components Zn2SiO4 and Er2Si2O7 was also presented in this study. The 1.16-μm luminescence is attributed to the Si NPs, and the suppression of Si NPs related emission is caused by consumption of Si in the formation of Er silicate and zinc silicide and the energy transfer between Si NPs and Er3+. The intensity of Er3+ related 1.54-μm PL can be modulated by the Si NPs fabricated by implantation and optimizing the annealing condition.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
