Abstract
A paper based carbon-FET (C-FET) was developed with graphite as channel. The performance of the fabricated C-FET was enhanced by embedding Si nanoparticles (SiNP) with the graphite. Initially, graphite was brush coated on paper substrate by mechanically rubbing a graphite source to fabricate the channel. However, to embed SiNP, the graphite was brush coated in presence of SiNPs, which formed graphite-SiNP composite and improved the performance of the device. It was observed that due to the presence of SiNP, the effect of gate voltage was improved approximately by a factor of four. The device was operated in back gate configuration with the paper as the dielectric material. Effect of loading of SiNP was also checked and it was found that the performance of the device improved with increase in SiNP loading. Thus, a carbon-FET was demonstrated with flexible substrate, which can be useful for different sensing and flexible electronic applications. Further, it was also observed that the performance of the C-FET was improved by adding semiconducting SiNPs. This approach of fabricating flexible paper based C-FETs are expected to be applied in the development of economical, replaceable, environment friendly, and disposable biomedical or point-of-care (POC) instruments, sensors, wearable and flexible electronic devices which will be affordable for a larger section of society.
Published Version
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