Abstract
Laterally ordered multilayered arrays of InGaAs quantum dots are investigated by photoluminescence as a function of high index GaAs substrates. Different laser wavelengths are used to investigate the photoluminescence from quantum dots layer-by-layer. High optical quality is demonstrated for laterally ordered quantum dot arrays. GaAs(511)B is identified as the optimum high index substrate for growth of InGaAs∕GaAs multilayered quantum dots, demonstrating strong photoluminescence with a narrow full width at half maximum linewidth of 23meV in spite of the potential for misfit dislocations.
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