Photoluminescence from GaAs nanocrystals fabricated by Ga+ and As+ co-implantation into SiO2 matrices

Abstract

We have fabricated GaAs nanocrystals by means of Ga+ and As+ co-implantation into SiO2 matrices and applied selective excitation spectroscopy to clarify the origin of photoluminescence (PL) from GaAs nanocrystals in SiO2 matrices. Under blue laser excitation, broad PL spectra with multipeaks are observed in the visible spectral region. Under selective excitation at energies within a certain band, fine structures are observed at low temperatures and the size-dependent PL structures are attributed to quantum confinement states in GaAs nanocrystals. The origin of visible PL from GaAs/SiO2 nanocomposites is discussed.