Abstract
AbstractWe have fabricated zincblende GaAs nanocrystals by means of Ga+ and As+ coimplantation into SiO2 matrices. A broad photoluminescence band is observed in the visible spectral region. Under selective excitation at energies within the visible luminescence band, GaAs-related phonon structures are observed at low temperatures. The photoluminescence mechanism in GaA/SiO2 nanocomposites is discussed.
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