Abstract
We investigated the influence of the wire-like Si dopant incorporation on the photoluminescence (PL) properties of samples with a thin GaAs cap layer. The near band gap PL has been found to be dominated by exciton recombination in the 10 nm cap layers. For samples grown on vicinal GaAs(001) surfaces under conditions favourable for the wire-like Si incorporation, a considerable enhancement of the exciton PL intensity as well as of the PL decay time has been found.
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