Abstract
Herein, the optimization of (In)GaN heterostructures for chemical sensing is presented. The metalorganic vapor phase epitaxy (MOVPE)‐grown sensor consists of an InxGa1−xN quantum well (QW) placed close to the surface of a GaN substrate with a thin GaN cap layer on top. The photoluminescence (PL) wavelength of this QW is sensitive to surface potential changes and thus its optical signal is used as sensor response. Simulations are performed with nextnano to improve its sensitivity. Sensor parameters such as the cap layer thickness d, QW thickness Lz, background buffer layer doping concentration N, and indium concentration x of the QW are varied. It is found that a thin cap layer, together with high background doping and medium QW thickness, is ideal. The indium content does not show a strong influence on sensitivity. The trends found in the simulations are mostly confirmed in real‐world experiments performed in a chemical sensing setup, yet quantitative deviations exist.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
