Abstract
We have investigated ZnSe epitaxial layers grown by molecular beam epitaxy on vicinal GaAs(110) substrates using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) and photoluminescence (PL). ZnSe films on vicinal GaAs(110) surfaces misoriented 6° toward (111)A show poor crystal quality and rough surface morphology with (111) facets. On the other hand, RHEED and AFM observations reveal that ZnSe growth proceeds in a layer-by-layer fashion on vicinal GaAs(110) surfaces misoriented 6° toward (111)B and that the surfaces consist of regular arrays of monoatomic steps. The PL spectra are dominated by the near-band-edge emission.
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