Abstract
Electronic surface parameters of GaAs have been determined from a qualitative and quantitative analysis of the relative photoluminescence intensity at 300 K. Characteristics of etched (100) surfaces ofn- andp-type liquid phase epitaxial GaAs have been found to be governed by negative surface charges. A density of charged surface states of about 1012 cm−2 and a band bending of 0.59 eV have been found forn-type material with an electron concentration of 1.1×1017 cm−3. Forp-type samples with hole densities ranging from 6×1015 to 4.3×1018 cm−3 the estimated density of negatively charged surface states was below 2×1011 cm−2, and the band bending was not more than a few kT.
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