Abstract
Hexagonal shaped radial and quasialigned arrays of ZnO nanorods with diameter of about 40–60 nm have been deposited on p-Si (100) substrates by vapor-solid method using Zn as the source material. x-ray diffraction, field emission scanning electron microscopy, temperature dependent-photoluminescence, and impedance spectroscopy have been used to characterize the structural, optical and electrical transport properties of the grown nanostructures. At room temperature, a strong free excitonic emission peak at 3.311 eV with very weak defect emissions is observed. At low temperatures, near-band-edge steady-state photoluminescence spectra of ZnO nanorods are dominated by neutral-donor-bound-exciton (D0X) transitions with corresponding transverse and longitudinal optical phonon replicas. The impedance spectra as a function of bias voltage and temperature have been studied in detail. The differences in characteristics of p-Si/ZnO/Al and Al/ZnO/Al devices are discussed by using one and two RC equivalent circuits. A comparative study of the impedance spectra for bulk ZnO and ZnO nanostructures is presented. The activation energy of ZnO nanorods is found to be 0.08 eV, which is slightly greater than the reported bulk value.
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