Photoluminescence and composition of amorphous As2Se3 films modified with Er(thd)3 complex compound

Abstract

The photoluminescence and composition of amorphous As2Se3 films modified with an Er(thd)3 complex compound have been studied. A band centered at 1.54 μm, characteristic of photoluminescence from Er embedded in amorphous matrices, has been revealed at room temperature. The composition of thin amorphous As2Se3 films modified with an Er(thd)3 complex compound has been examined by methods of nuclear microanalysis: Rutherford backscattering and nuclear resonant reactions. Dependences of the concentrations of Er ions, oxygen, and carbon on the growth conditions of the films are obtained. It is shown that the Er concentration in a thin film varies nonlinearly as the relative concentration of the starting complex compound increases. In addition, the increase in the Er content of a film is accompanied by a simultaneous rise in the content of such light elements as oxygen and carbon. Comparative analysis of the nuclear microanalysis data and IR spectra demonstrates that, in modification of As2Se3 with the Er(thd)3 complex compound by the given method, the nearest environment of Er in the complex compound is partly preserved.